Chemical mechanical polishing and cleaning processes cause unintended material loss and surface damage to cobalt, copper, and tungsten. Preventing this degradation maintains structural integrity and electrical performance in semiconductor interconnects.

Inadequate differential removal rates between silicon-germanium and surrounding silicon layers during semiconductor fabrication. Achieving high selectivity prevents unintended substrate damage and ensures precise feature definition.

Capillary forces during drying cause structural failure in high-aspect-ratio features. Preventing this mechanical instability ensures the integrity of sub-50nm semiconductor architectures.

Low removal rates and poor surface quality during the planarization of germanium-based substrates. Improving material removal efficiency enables higher throughput in advanced semiconductor manufacturing.