BASF

Last updated January 31, 2026

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Silicon-germanium selective etching chemistry: BASFRecent Research Landscape

Uncontrolled material removal during nanostructure fabrication leads to critical dimension loss and device failure. These formulations utilize specific chemical affinities to achieve high-precision etch selectivity between silicon and germanium layers.

What technical problems is BASF addressing in Silicon-germanium selective etching chemistry?

Post-processing surface contaminant residue

(11)evidences

Simultaneous exposure of cobalt and copper to cleaning agents leads to galvanic corrosion or non-selective degradation. Preventing this damage maintains interconnect integrity and device reliability.

Poor silicon germanium etch selectivity

(7)evidences

Uncontrolled etching rates between silicon and silicon-germanium layers lead to structural damage. Precise differential removal is required to maintain critical dimensions in nanostructures.

Interconnect metal surface nonplanarity

(4)evidences

Unintended removal of tungsten during chemical-mechanical polishing or etching processes leads to structural defects. Preventing this degradation ensures critical feature integrity and device performance.

Nanostructure capillary pattern collapse

(3)evidences

High aspect ratio features undergo structural failure during drying due to surface tension forces. Preventing this mechanical instability allows for smaller, denser semiconductor nodes.