High density of stacking faults and dislocations occurs when growing 3C-SiC on heterogeneous substrates. Reducing these structural imperfections improves carrier mobility and device reliability.

High contact resistance and poor charge carrier transport at the silicon-electrode interface. Reducing these losses increases the fill factor and overall energy conversion efficiency.

Loss of high-value materials and environmental hazards from byproduct mixtures. Recovery and purification enable material reuse and cost reduction.

Inconsistent heat distribution during physical vapor transport causes crystal defects and structural non-uniformity. Precise thermal control prevents parasitic nucleation and improves crystalline quality.