Incompatible crystal structures between substrates and epitaxial layers cause structural dislocations. Reducing these defects prevents electrical leakage and mechanical failure in power devices.

Subsurface damage and surface irregularities during crystal slicing and doping prevent uniform layer deposition. Eliminating these defects ensures high-efficiency carrier transport and structural integrity in semiconductor devices.

Variations in the chemical composition and particle size of starting powders lead to structural defects in bulk crystals. Standardizing the precursor ensures uniform thermal conductivity and electrical properties in final components.