Silicon carbide seed crystal assembly: BYDRecent Research Landscape
Inconsistent particle size and purity in silicon carbide precursors lead to structural defects in final ceramic components. Precise control over the powder synthesis process ensures uniform phase distribution and high-density sintering.
What technical problems is BYD addressing in Silicon carbide seed crystal assembly?
Epitaxial layer surface defects
(15)evidences
Crystalline structural differences between the substrate and the epitaxial layer lead to stacking faults and dislocations. Minimizing these defects prevents electrical leakage and improves device yield.
Surface defect density
(12)evidences
Weak bonding at material interfaces leads to mechanical separation and electrical discontinuity. Improving interfacial integrity prevents delamination during thermal cycling and high-stress processing.
Seed crystal thermal detachment
(12)evidences
Loss of high-value diamond particles within oily byproduct streams prevents material reuse. Recovering these materials reduces manufacturing overhead and environmental impact.