Poor structural integrity and resolution limits in thick film and overlayer applications. Improving pattern fidelity prevents structural collapse and dimensional inaccuracies during lithographic processing.

High aspect ratio resist features frequently suffer from mechanical instability and capillary force damage during aqueous processing. Preventing pattern deformation or detachment ensures the dimensional integrity of semiconductor devices.

High aspect ratio photoresist features frequently deform or break due to capillary forces during the cleaning and drying stages. Preventing this mechanical failure allows for smaller, denser semiconductor architectures.

Incomplete removal of hardened photoresist and metallic byproducts leads to device defects. Eliminating these contaminants ensures electrical integrity and high manufacturing yields.