Liquid phase resist pattern stabilization: MerckRecent Research Landscape
Pattern collapse during drying increases defect rates in high-aspect-ratio lithography. This chemistry stabilizes delicate resist structures to maintain dimensional integrity during manufacturing.
What technical problems is Merck addressing in Liquid phase resist pattern stabilization?
Insufficient photosensitivity and resolution
(20)evidences
Incomplete removal of resist layers and structural instability during liquid processing leads to pattern defects. Minimizing these failures ensures high-fidelity semiconductor feature definition.
Resist pattern collapse
(9)evidences
Capillary forces during the drying phase of liquid processing cause structural failure of high-aspect-ratio features. Preventing this mechanical instability allows for smaller, more densely packed semiconductor architectures.
Post-etch surface contaminant persistence
(6)evidences
Capillary forces during the drying of liquid phase resists cause fine features to lean or break. Preventing this mechanical failure allows for higher aspect ratio structures in semiconductor manufacturing.