Low photon absorption and slow reaction kinetics in traditional precursors limit patterning efficiency. Increasing sensitivity reduces the exposure dose required for high-resolution lithography.

Unwanted material growth on non-target surfaces during thin film fabrication. Achieving precise spatial control prevents pattern defects and eliminates costly etching steps.

Unstable silicon precursors decompose prematurely during deposition or synthesis. Improving molecular architecture prevents uncontrolled film impurities and non-uniform particle growth.

Spontaneous or premature chemical reactions during vapor phase transitions lead to film impurities and poor interface quality. Eliminating parasitic reactions ensures high-purity atomic layer deposition.