Low photon absorption and slow reaction kinetics in organometallic precursors limit patterning efficiency. Enhancing sensitivity reduces exposure time and improves throughput in high-resolution manufacturing.

Unwanted material growth on non-target surfaces during thin film fabrication. Achieving high-fidelity spatial control prevents short circuits and reduces the need for complex lithographic patterning steps.

Low thermal stability and poor volatility in silicon precursors lead to non-uniform film deposition and premature decomposition. Improving these properties ensures consistent vapor phase delivery and high-purity thin film growth.

Oxygen-containing precursors and co-reactants cause unwanted oxidation of sensitive metal substrates and film interfaces. Eliminating oxygen prevents degradation of electrical conductivity and structural integrity in thin-film stacks.