Saint Gobain

Last updated February 23, 2026

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Triazole oxidizing slurry chemistry: Saint GobainRecent Research Landscape

Surface defects and low throughput in silicon carbide processing drive up manufacturing costs. This lever controls the chemical-mechanical removal rate through specific oxidizing agents and corrosion inhibitors to achieve atomic-scale smoothness.

What technical problems is Saint Gobain addressing in Triazole oxidizing slurry chemistry?

Excessive surface roughness

(5)evidences

Uncontrolled chemical activity during material removal leads to topographical defects and non-planar surfaces. Minimizing these irregularities ensures the structural integrity of sub-micron semiconductor layers.

Insufficient material removal rates

(3)evidences

Chemical inertness and extreme hardness of silicon carbide substrates prevent efficient material removal during planarization. Overcoming this bottleneck reduces processing time and surface defects in semiconductor manufacturing.