Unwanted current leakage through unselected cells in dense crossbar arrays causes read errors and high power consumption. Mitigating this interference ensures data integrity and energy efficiency in non-volatile memory.

Conventional voltage-mode or current-mode in-memory computing suffers from high power consumption and signal noise during multiply-accumulate operations. Shifting to the charge domain reduces static power dissipation and improves computational precision in dense crossbar arrays.

Planar memory layouts suffer from physical scaling constraints and high bit-line resistance. Increasing vertical connectivity enables higher storage density without increasing the chip footprint.